Invention Grant
- Patent Title: Integrated circuit device and method for manufacturing integrated circuit device
- Patent Title (中): 集成电路器件及集成电路器件制造方法
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Application No.: US12342446Application Date: 2008-12-23
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Publication No.: US07816685B2Publication Date: 2010-10-19
- Inventor: Daiki Yamada , Yoshitaka Dozen , Eiji Sugiyama , Hidekazu Takahashi
- Applicant: Daiki Yamada , Yoshitaka Dozen , Eiji Sugiyama , Hidekazu Takahashi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-161413 20050601
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
Public/Granted literature
- US20090140249A1 INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE Public/Granted day:2009-06-04
Information query
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