Invention Grant
US07816728B2 Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications
有权
用于SOC应用的高密度基于沟槽的非易失性随机接入SONOS存储器单元的结构和方法
- Patent Title: Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications
- Patent Title (中): 用于SOC应用的高密度基于沟槽的非易失性随机接入SONOS存储器单元的结构和方法
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Application No.: US10907686Application Date: 2005-04-12
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Publication No.: US07816728B2Publication Date: 2010-10-19
- Inventor: Herbert L. Ho , Jack A. Mandelman , Tak H. Ning , Yoichi Otani
- Applicant: Herbert L. Ho , Jack A. Mandelman , Tak H. Ning , Yoichi Otani
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
The present invention provides two-transistor silicon-oxide-nitride-oxide-semiconductor (2-Tr SONOS) non-volatile memory cells with randomly accessible storage locations as well as method of fabricating the same. In one embodiment, a 2-Tr SONOS cell is provided in which the select transistor is located within a trench structure having trench depth from 1 to 2 μm and the memory transistor is located on a surface of a semiconductor substrate adjoining the trench structure. In another embodiment, a 2-Tr SONOS memory cell is provided in which both the select transistor and the memory transistor are located within a trench structure having the depth mentioned above.
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