Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11707076Application Date: 2007-02-16
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Publication No.: US07816748B2Publication Date: 2010-10-19
- Inventor: Yoji Nomura
- Applicant: Yoji Nomura
- Applicant Address: JP Moriguchi-shi
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Moriguchi-shi
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-043827 20060221
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L31/062

Abstract:
The absorption of moisture from a wall surface of an apertured part formed in an interlayer insulating film in accordance with a light-receiving part of a light detector is minimized and deterioration of wiring in the interlayer insulating film is prevented. A position that corresponds to a light-receiving part 52 of a wiring-structure layer 90 obtained by layering an Al layer and an interlayer insulating film composed of SOG or another material is etched, and an apertured part 120 is formed. A silicon nitride film 130 is then deposited on a side-wall surface and bottom surface of the apertured part 120 via CVD. The silicon nitride layer 130 prevents moisture from infiltrating the wiring-structure layer 90.
Public/Granted literature
- US20070194396A1 Semiconductor device and method for manufacturing same Public/Granted day:2007-08-23
Information query
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