Invention Grant
- Patent Title: Integrated circuit including isolation regions substantially through substrate
- Patent Title (中): 集成电路包括基本上通过衬底的隔离区域
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Application No.: US11971374Application Date: 2008-01-09
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Publication No.: US07816759B2Publication Date: 2010-10-19
- Inventor: Armin Tilke
- Applicant: Armin Tilke
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/76
Abstract:
An integrated circuit including a substrate and trench isolation regions. The substrate supports a device. The trench isolation regions are configured to laterally isolate the device. The trench isolation regions extend substantially through the substrate.
Public/Granted literature
- US20090174027A1 INTEGRATED CIRCUIT INCLUDING ISOLATION REGIONS SUBSTANTIALLY THROUGH SUBSTRATE Public/Granted day:2009-07-09
Information query
IPC分类:
