Invention Grant
- Patent Title: Semiconductor device having low dielectric insulating film and manufacturing method of the same
- Patent Title (中): 具有低介电绝缘膜的半导体器件及其制造方法
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Application No.: US11638717Application Date: 2006-12-14
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Publication No.: US07816790B2Publication Date: 2010-10-19
- Inventor: Aiko Mizusawa , Osamu Okada , Takeshi Wakabayashi
- Applicant: Aiko Mizusawa , Osamu Okada , Takeshi Wakabayashi
- Applicant Address: JP Tokyo
- Assignee: Casio Computer Co., Ltd.
- Current Assignee: Casio Computer Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, PC
- Priority: JP2006-139821 20060519; JP2006-316643 20061124
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a semiconductor substrate and low dielectric film wiring line laminated structure portions which are provided in regions on the semiconductor substrate except a peripheral portion thereof. Each of the laminated structure portions has a laminated structure of low dielectric films and a plurality of wiring lines. An insulating film is provided on an upper side of the laminated structure portion. Connection pad portions for electrodes are arranged on the insulating film to be electrically connected to the connection pad portions of uppermost wiring lines of the laminated structure portion. Bump electrodes for external connection are provided on the connection pad portions for the electrodes. A sealing film is provided on the insulating film and on the peripheral portion of the semiconductor substrate. Side surfaces of the laminated structure portions are covered with the insulating film or the sealing film.
Public/Granted literature
- US20070267743A1 Semiconductor device having low dielectric insulating film and manufacturing method of the same Public/Granted day:2007-11-22
Information query
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