Invention Grant
- Patent Title: Semiconductor device with conductive interconnect
- Patent Title (中): 具有导电互连的半导体器件
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Application No.: US11855170Application Date: 2007-09-14
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Publication No.: US07816792B2Publication Date: 2010-10-19
- Inventor: Helmut Tews , Hans-Gerd Jetten , Hans-Joachim Barth
- Applicant: Helmut Tews , Hans-Gerd Jetten , Hans-Joachim Barth
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies
- Agent Philip H. Schlazer
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
One or more embodiments are related to a semiconductor structure, comprising: a semiconductor chip; a conductive layer comprising at least a first conductive pathway and a second conductive pathway spacedly disposed from the first conductive pathway, the first conductive pathway electrically coupled to the chip, at least a portion of the first conductive pathway disposed outside the lateral boundary of the chip, at least a portion of the second conductive pathway disposed outside the lateral boundary of the chip; and a conductive interconnect disposed outside the lateral boundary of the chip, the conductive interconnect electrically coupling the first conductive pathway to the second conductive pathway.
Public/Granted literature
- US20090072411A1 SEMICONDUCTOR DEVICE WITH CONDUCTIVE INTERCONNECT Public/Granted day:2009-03-19
Information query
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