Invention Grant
US07816906B2 Method for determining anisotropy of 1-D conductor or semiconductor synthesis
失效
确定1-D导体或半导体合成的各向异性的方法
- Patent Title: Method for determining anisotropy of 1-D conductor or semiconductor synthesis
- Patent Title (中): 确定1-D导体或半导体合成的各向异性的方法
-
Application No.: US12060777Application Date: 2008-04-01
-
Publication No.: US07816906B2Publication Date: 2010-10-19
- Inventor: Amol M. Kalburge , Zhen Yu
- Applicant: Amol M. Kalburge , Zhen Yu
- Applicant Address: US CA Newport Beach
- Assignee: RF Nano Corporation
- Current Assignee: RF Nano Corporation
- Current Assignee Address: US CA Newport Beach
- Agency: Greenberg Traurig LLP
- Agent Bradley D. Blanche
- Main IPC: G01R31/28
- IPC: G01R31/28

Abstract:
A method is provided for determining the anisotropy of alignment of a random array of 1-D conductive elements (e.g., carbon nanotube or silicon nanowire) formed on a substrate. A pattern of a plurality of electrodes are arranged on the substrate containing the 1-D conductive elements and a plurality of electrical property measurements are performed in a plurality of different directions between the plurality of electrodes. The plurality of measurements are combined together to generate a total measurement sum of electrical property measurements between the various electrodes. The measured electrical property is determined between a selected pair of the plurality of electrodes along a selected direction extending between the selected pair of electrodes. The anisotropy of alignment of the 1-D conductive elements on the substrate along the selected direction is determined based on a ratio of the measured electrical property between the selected pair of electrodes versus the total measurement sum.
Public/Granted literature
- US20090058395A1 Method for Determining Anisotropy of 1-D Conductor or Semiconductor Synthesis Public/Granted day:2009-03-05
Information query