Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US12062934Application Date: 2008-04-04
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Publication No.: US07816974B2Publication Date: 2010-10-19
- Inventor: Yuta Araki
- Applicant: Yuta Araki
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
A control target circuit formed by transistors is provided with a power supply level control circuit for controlling the power supply voltage supplied to the control target circuit, a substrate level control circuit for controlling the substrate voltages of the transistors, and a special substrate level control circuit for controlling the substrate voltages during transition of the power supply voltage through a different system. During transition of the power supply voltage, the special substrate level control circuit positively controls the substrate voltages such that desired substrate voltage levels are reached earlier, whereby the time for the substrate voltages to transfer to the desired substrate voltage levels is shortened. To suppress latch-up and breakdown voltage degradation, the special substrate level control circuit controls supply of voltages and currents so as to comply with the potential difference conditions defined between the power supply voltage and the substrate voltages.
Public/Granted literature
- US20090251202A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2009-10-08
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