Invention Grant
- Patent Title: Power supply circuit using insulated-gate field-effect transistors
- Patent Title (中): 使用绝缘栅场效应晶体管的电源电路
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Application No.: US12250999Application Date: 2008-10-14
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Publication No.: US07816976B2Publication Date: 2010-10-19
- Inventor: Ryu Ogiwara , Daisaburo Takashima
- Applicant: Ryu Ogiwara , Daisaburo Takashima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-268226 20071015
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A power supply circuit is disclosed. The power supply circuit is provided with a reference voltage generation circuit to receive a voltage from a higher voltage supply so as to generate a reference voltage. The reference voltage from the reference voltage generation circuit is outputted to a power supply voltage generation circuit. The power supply voltage generation circuit boosts the reference voltage to generate a boosted power supply voltage. The boosted power supply voltage is inputted to a bandgap reference circuit. The bandgap reference circuit generates a reference voltage by using the boosted power supply voltage.
Public/Granted literature
- US20090108919A1 POWER SUPPLY CIRCUIT USING INSULATED-GATE FIELD-EFFECT TRANSISTORS Public/Granted day:2009-04-30
Information query
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