Invention Grant
- Patent Title: Depletion-mode MOSFET circuit and applications
- Patent Title (中): 消耗型MOSFET电路及应用
-
Application No.: US12019391Application Date: 2008-01-24
-
Publication No.: US07817459B2Publication Date: 2010-10-19
- Inventor: Wen T. Lin
- Applicant: Wen T. Lin
- Applicant Address: US PA Spring House
- Assignee: Keystone Semiconductor Inc.
- Current Assignee: Keystone Semiconductor Inc.
- Current Assignee Address: US PA Spring House
- Agency: Fox Rothschild LLP
- Agent Richard C. Woodbrigde; Perry M. Fonseca
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Positive logic circuits, systems and methods using MOSFETs operated in a depletion-mode, including electrostatic discharge protection circuits (ESD), non-inverting latches and buffers, and one-to-three transistor static random access memory cells. These novel circuits supplement enhancement-mode MOSFET technology and are also intended to improve the reliability of the complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) products.
Public/Granted literature
- US20080175045A1 DEPLETION-MODE MOSFET CIRCUIT AND APPLICATIONS Public/Granted day:2008-07-24
Information query