Invention Grant
US07817475B2 Method and apparatus for accessing a phase-change memory 有权
用于访问相变存储器的方法和装置

  • Patent Title: Method and apparatus for accessing a phase-change memory
  • Patent Title (中): 用于访问相变存储器的方法和装置
  • Application No.: US11999419
    Application Date: 2007-12-05
  • Publication No.: US07817475B2
    Publication Date: 2010-10-19
  • Inventor: Tyler Lowrey
  • Applicant: Tyler Lowrey
  • Applicant Address: US MI Rochester Hills
  • Assignee: Ovonyx, Inc.
  • Current Assignee: Ovonyx, Inc.
  • Current Assignee Address: US MI Rochester Hills
  • Agent Kevin L. Bray
  • Main IPC: G11C16/06
  • IPC: G11C16/06
Method and apparatus for accessing a phase-change memory
Abstract:
Fixed-voltage programming pulses are employed to program a phase change memory cell. A burst of incrementally widening fixed-voltage programming pulses may be employed to program a phase change memory to a target threshold voltage.
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