Invention Grant
- Patent Title: Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
- Patent Title (中): 具有电流阻挡层的氮化物半导体激光器件及其制造方法
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Application No.: US11790442Application Date: 2007-04-25
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Publication No.: US07817692B2Publication Date: 2010-10-19
- Inventor: Hiroaki Matsumura , Tomoya Yanamono
- Applicant: Hiroaki Matsumura , Tomoya Yanamono
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPP2003-184812 20030627; JPP2003-272832 20030710
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0≦x≦0.1, 0.5≦y≦1, 0.5≦x+y≦1) and has a stripe-shaped window 32 formed therein to pass current flow.
Public/Granted literature
- US20070195848A1 Nitride semiconductor laser device having current blocking layer and method of manufacturing the same Public/Granted day:2007-08-23
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