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US07818611B2 Memory device internal parameter reliability 有权
内存设备内部参数可靠性

Memory device internal parameter reliability
Abstract:
Embodiments herein may store redundant copies of an operational parameter associated with an internal operation of a memory device. The redundant copies and associated parity bits may be stored in sets of writeable, non-volatile storage cells. A working area of the memory device may subsequently be populated with one or more redundant copies of the operational parameter, with a flag associated with the operational parameter, or with both. Other embodiments are described and claimed.
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