Invention Grant
- Patent Title: Memory device internal parameter reliability
- Patent Title (中): 内存设备内部参数可靠性
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Application No.: US12435206Application Date: 2009-05-04
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Publication No.: US07818611B2Publication Date: 2010-10-19
- Inventor: Vipul Patel , Theodore T. Pekny
- Applicant: Vipul Patel , Theodore T. Pekny
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
Embodiments herein may store redundant copies of an operational parameter associated with an internal operation of a memory device. The redundant copies and associated parity bits may be stored in sets of writeable, non-volatile storage cells. A working area of the memory device may subsequently be populated with one or more redundant copies of the operational parameter, with a flag associated with the operational parameter, or with both. Other embodiments are described and claimed.
Public/Granted literature
- US20090222689A1 MEMORY DEVICE INTERNAL PARAMETER RELIABILITY Public/Granted day:2009-09-03
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