Invention Grant
US07827852B2 Gas sensor and method of making 有权
气体传感器及制作方法

Gas sensor and method of making
Abstract:
A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx O2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.
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