Invention Grant
- Patent Title: Semiconductor acceleration sensor
- Patent Title (中): 半导体加速度传感器
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Application No.: US11815556Application Date: 2006-03-29
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Publication No.: US07827865B2Publication Date: 2010-11-09
- Inventor: Yutaka Hattori , Yasuo Hatano
- Applicant: Yutaka Hattori , Yasuo Hatano
- Applicant Address: JP Tokyo
- Assignee: The Yokohama Rubber Co., Ltd.
- Current Assignee: The Yokohama Rubber Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2005-097901 20050330
- International Application: PCT/JP2006/306481 WO 20060329
- International Announcement: WO2006/106739 WO 20061012
- Main IPC: G01P15/12
- IPC: G01P15/12

Abstract:
The present invention is to provide a semiconductor acceleration sensor capable of sensing accelerations in two directions parallel to the surface of a diaphragm and orthogonal to each other with respective proper sensitivities. A semiconductor acceleration sensor is constituted of diaphragm pieces extending from the center of the diaphragm surface to a wafer outer-circumferential frame section, respectively, along an X axis direction and a Y axis direction orthogonal to each other. On the upper surface of the diaphragm pieces, there are formed piezo resistors Rx1 to Rx4, Ry1 to Ry4, Rz1 to Rz4. In the diaphragm pieces disposed on a single line along the X axis direction and the diaphragm pieces disposed on a single line along the Y axis direction, the areas of cross section orthogonal to the axis are set according to a maximum value of acceleration, respectively, in the X axis direction or Y axis direction.
Public/Granted literature
- US20080271535A1 Semiconductor Acceleration Sensor Public/Granted day:2008-11-06
Information query
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