Invention Grant
- Patent Title: Method for crystallizing silicon using a ramp shaped laser beam
- Patent Title (中): 使用斜坡形激光束使硅结晶的方法
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Application No.: US11263838Application Date: 2005-11-02
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Publication No.: US07828894B2Publication Date: 2010-11-09
- Inventor: JaeSung You
- Applicant: JaeSung You
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge
- Priority: KR10-2004-0089449 20041104
- Main IPC: C30B1/02
- IPC: C30B1/02
Abstract:
A crystallization method, includes: forming an amorphous silicon layer on a substrate; forming a first crystallization region by irradiating the amorphous silicon layer with a laser beam having a ramp shaped cross sectional profile that decreases in a scanning direction; and performing a second crystallization by moving a predetermined length in a scanning direction so as to be partially overlapped with the first crystallization region formed by the first crystallization.
Public/Granted literature
- US20060094213A1 Method for crystallizing silicon using a ramp shaped laser beam Public/Granted day:2006-05-04
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