Invention Grant
- Patent Title: Methods of growing a group III nitride crystal
- Patent Title (中): 生长III族氮化物晶体的方法
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Application No.: US11878125Application Date: 2007-07-20
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Publication No.: US07828896B2Publication Date: 2010-11-09
- Inventor: Hirokazu Iwata , Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masato Aoki
- Applicant: Hirokazu Iwata , Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masato Aoki
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Dickstein Shapiro LLP
- Priority: JP2003-019716 20030129; JP2003-071302 20030317; JP2003-081836 20030325; JP2004-011536 20040120; JP2004-012906 20040121; JP2004-013562 20040121
- Main IPC: C30B11/04
- IPC: C30B11/04
Abstract:
A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.
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