Invention Grant
US07828981B2 Semiconductor probe with high resolution resistive tip and method of fabricating the same
有权
具有高分辨率电阻尖端的半导体探针及其制造方法
- Patent Title: Semiconductor probe with high resolution resistive tip and method of fabricating the same
- Patent Title (中): 具有高分辨率电阻尖端的半导体探针及其制造方法
-
Application No.: US11835874Application Date: 2007-08-08
-
Publication No.: US07828981B2Publication Date: 2010-11-09
- Inventor: Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
- Applicant: Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
- Applicant Address: KR Suwon-si KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- Current Assignee Address: KR Suwon-si KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2005-0081996 20050903
- Main IPC: C23F1/00
- IPC: C23F1/00
Abstract:
A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
Public/Granted literature
- US20070267385A1 SEMICONDUCTOR PROBE WITH HIGH RESOLUTION RESISTIVE TIP AND METHOD OF FABRICATING THE SAME Public/Granted day:2007-11-22
Information query
