Invention Grant
US07828987B2 Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits
失效
有机BARC蚀刻工艺能够用于形成低K双镶嵌集成电路
- Patent Title: Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits
- Patent Title (中): 有机BARC蚀刻工艺能够用于形成低K双镶嵌集成电路
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Application No.: US11385256Application Date: 2006-03-20
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Publication No.: US07828987B2Publication Date: 2010-11-09
- Inventor: Jens Karsten Schneider , Ying Xiao , Gerardo A. Delgadino
- Applicant: Jens Karsten Schneider , Ying Xiao , Gerardo A. Delgadino
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a hardmask masking the organic planarization layer. This may include introducing into the plasma reactor an etchant gas chemistry including N2, H2, and O2 and etching a masked organic planarization layer using a plasma formed from the etchant gas chemistry. This may include etching through the planarization layer to form a trench with a single etch step.
Public/Granted literature
- US20070218679A1 Organic BARC etch process capable of use in the formation of low k dual damascene integrated circuits Public/Granted day:2007-09-20
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