Invention Grant
US07829134B2 Method for producing memory having a solid electrolyte material region
有权
具有固体电解质材料区域的记忆体的制造方法
- Patent Title: Method for producing memory having a solid electrolyte material region
- Patent Title (中): 具有固体电解质材料区域的记忆体的制造方法
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Application No.: US11153964Application Date: 2005-06-16
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Publication No.: US07829134B2Publication Date: 2010-11-09
- Inventor: Cay-Uwe Pinnow , Klaus-Dieter Ufert
- Applicant: Cay-Uwe Pinnow , Klaus-Dieter Ufert
- Applicant Address: US CA Sunnyvale
- Assignee: Adesto Technology Corporation
- Current Assignee: Adesto Technology Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102004029436 20040618
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
A method for producing a solid electrolyte material region for a memory element of a solid electrolyte memory cell. A first material is formed in substantially pure form. A thermal treatment is carried out in the presence of at least one second material, and the chalcogenide material of the solid electrolyte material region thereby being produced.
Public/Granted literature
- US20060001000A1 Method for producing memory having a solid electrolyte material region Public/Granted day:2006-01-05
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