Invention Grant
- Patent Title: Particle deposition apparatus, particle deposition method, and manufacturing method of light-emitting device
- Patent Title (中): 微粒沉积装置,颗粒沉积方法和发光装置的制造方法
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Application No.: US11665735Application Date: 2005-10-21
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Publication No.: US07829154B2Publication Date: 2010-11-09
- Inventor: Satoshi Kobayashi , Yuki Iguchi
- Applicant: Satoshi Kobayashi , Yuki Iguchi
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2004-307226 20041021
- International Application: PCT/JP2005/019377 WO 20051021
- International Announcement: WO2006/043656 WO 20060427
- Main IPC: B05D1/06
- IPC: B05D1/06 ; B05B5/16

Abstract:
To provide a (homogeneous) particle deposit without any impurity contamination, on which only particles with a desired size are deposited. A solution, with particles dispersed in a solvent, is jetted as a flow of fine liquid droplets from a tip part of a capillary, and the jetted fine liquid droplets are electrically charged. This flow of the droplets is introduced into a vacuum chamber through a jet nozzle, as a free jet flow. The free jet flow that travels in the vacuum chamber is introduced into an inside of a deposition chamber, inside of which is set at lower pressure, through a skimmer nozzle provided in the deposition chamber, as an ion beam. Subsequently, by an energy separation device, only particles having particular energy are selected from the electrically charged particles in the flow, and are deposited on a deposited body disposed in an inside of the deposition chamber.
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