Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.