Invention Grant
US07829207B2 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
有权
基于ZnO的化合物半导体晶体和ZnO基化合物半导体衬底的制造方法
- Patent Title: Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
- Patent Title (中): 基于ZnO的化合物半导体晶体和ZnO基化合物半导体衬底的制造方法
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Application No.: US12239739Application Date: 2008-09-27
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Publication No.: US07829207B2Publication Date: 2010-11-09
- Inventor: Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Whan Cho
- Applicant: Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Whan Cho
- Applicant Address: JP JP JP
- Assignee: Stanley Electric Co., Ltd.,Tokyo Denpa Co., Ltd.,Tohoku University
- Current Assignee: Stanley Electric Co., Ltd.,Tokyo Denpa Co., Ltd.,Tohoku University
- Current Assignee Address: JP JP JP
- Agency: Chen Yoshimura LLP
- Priority: JP2005-243472 20050824
- Main IPC: B32B9/00
- IPC: B32B9/00 ; B32B19/00 ; C30B29/16 ; C30B29/46
Abstract:
A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
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