Invention Grant
- Patent Title: Pellicle stress relief
- Patent Title (中): 防护薄膜应力消除
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Application No.: US12029275Application Date: 2008-02-11
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Publication No.: US07829248B2Publication Date: 2010-11-09
- Inventor: Burn Jeng Lin , Hsin-Chang Lee , Ming-Jiun Yao
- Applicant: Burn Jeng Lin , Hsin-Chang Lee , Ming-Jiun Yao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
The present disclosure provides a mask-pellicle system for lithography patterning. The mask-pellicle system includes a mask substrate; a predefined pattern formed on the transparent pattern; a pellicle configured approximate the transparent substrate; a pellicle frame designed to secure the pellicle; and a stress-absorbing feature configured between the pellicle frame and the mask substrate, to reduce stress of the mask substrate.
Public/Granted literature
- US20090029268A1 PELLICLE STRESS RELIEF Public/Granted day:2009-01-29
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