Invention Grant
- Patent Title: Method for inspecting semiconductor device
- Patent Title (中): 半导体器件检查方法
-
Application No.: US12134406Application Date: 2008-06-06
-
Publication No.: US07829355B2Publication Date: 2010-11-09
- Inventor: Yasuhito Anzai
- Applicant: Yasuhito Anzai
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, P.L.L.C.
- Priority: JP2007-205708 20070807
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for inspecting a semiconductor device includes carrying out a first test for inspecting characteristics of semiconductor devices under a shielded (dark) condition to discriminate non-defective devices; and carrying out a second test on the semiconductor devices which have passed the first test as non-defective devices, for inspecting characteristics of the semiconductor devices. The second test is carried out while a predetermined color of light is applied to the semiconductor devices.
Public/Granted literature
- US20090042322A1 METHOD FOR INSPECTING SEMICONDUCTOR DEVICE Public/Granted day:2009-02-12
Information query
IPC分类:
