Invention Grant
US07829357B2 Method and test structure for monitoring CMP processes in metallization layers of semiconductor devices
有权
用于监测半导体器件的金属化层中的CMP工艺的方法和测试结构
- Patent Title: Method and test structure for monitoring CMP processes in metallization layers of semiconductor devices
- Patent Title (中): 用于监测半导体器件的金属化层中的CMP工艺的方法和测试结构
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Application No.: US12165725Application Date: 2008-07-01
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Publication No.: US07829357B2Publication Date: 2010-11-09
- Inventor: Michael Grillberger , Matthias Lehr
- Applicant: Michael Grillberger , Matthias Lehr
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102007057684 20071130
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
By forming a large metal pad and removing any excess material thereof, a pronounced recessed surface topography may be obtained, which may also affect the further formation of a metallization layer of a semiconductor device, thereby increasing the probability of maintaining metal residues above the recessed surface topography. Consequently, by providing test metal lines in the area of the recessed surface topography, the performance of a respective CMP process may be estimated with increased efficiency.
Public/Granted literature
- US20090140246A1 METHOD AND TEST STRUCTURE FOR MONITORING CMP PROCESSES IN METALLIZATION LAYERS OF SEMICONDUCTOR DEVICES Public/Granted day:2009-06-04
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