Invention Grant
- Patent Title: System and method for emitter layer shaping
- Patent Title (中): 发射极层成形的系统和方法
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Application No.: US12367343Application Date: 2009-02-06
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Publication No.: US07829358B2Publication Date: 2010-11-09
- Inventor: Dung T. Duong , Paul N. Winberg , Matthew R. Thomas , Elliot M. Pickering , Muhammad Khizar
- Applicant: Dung T. Duong , Paul N. Winberg , Matthew R. Thomas , Elliot M. Pickering , Muhammad Khizar
- Applicant Address: US TX Austin
- Assignee: Illumitex, Inc.
- Current Assignee: Illumitex, Inc.
- Current Assignee Address: US TX Austin
- Agency: Sprinkle IP Law Group
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Embodiments of an LED disclosed has an emitter layer shaped to a controlled depth or height relative to a substrate of the LED to maximize the light output of the LED and to achieve a desired intensity distribution. In some embodiments, the exit face of the LED may be selected to conserve radiance. In some embodiments, shaping the entire LED, including the substrate and sidewalls, or shaping the substrate alone can extract 100% or approximately 100% of the light generated at the emitter layers from the emitter layers. In some embodiments, the total efficiency is at least 90% or above. In some embodiments, the emitter layer can be shaped by etching, mechanical shaping, or a combination of various shaping methods. In some embodiments, only a portion of the emitter layer is shaped to form the tiny emitters. The unshaped portion forms a continuous electrical connection for the LED.
Public/Granted literature
- US20090289263A1 System and Method for Emitter Layer Shaping Public/Granted day:2009-11-26
Information query
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