Invention Grant
- Patent Title: Method of fabricating a suspension microstructure
- Patent Title (中): 制造悬浮微结构的方法
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Application No.: US12243972Application Date: 2008-10-02
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Publication No.: US07829364B2Publication Date: 2010-11-09
- Inventor: Siew-Seong Tan
- Applicant: Siew-Seong Tan
- Applicant Address: TW Hsinchu
- Assignee: MEMSMART Semiconductor Corporation
- Current Assignee: MEMSMART Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agent Banger Shia
- Priority: TW96148028A 20071214
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/84 ; C23F1/00

Abstract:
A suspension microstructure and its fabrication method, in which the method comprises the steps of: forming at least one insulation layer with inner micro-electro-mechanical structures on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one microstructure and a plurality of metal circuits that are independent from each other, the micro-electro-mechanical structures have an exposed portion on the surface of the insulation layer, and the exposed portion is provided with through holes or stacked metal-via layers correspondingly to the predetermined etching spaces of the micro-electro-mechanical structures, the above predetermined etching spaces and the stacked metal-via layers only penetrate the insulation layer; forming a photoresist with an opening on the upper surface of the exposed portion, and the opening of the photoresist is located outside all the through holes or the stacked metal-via layers; subsequently, conducting etching to realize the suspension of the microstructures.
Public/Granted literature
- US20090243084A1 SUSPENSION MICROSTRUCTURE AND A FABRICATION METHOD FOR THE SAME Public/Granted day:2009-10-01
Information query
IPC分类: