A method includes a step of forming a bump 104 having a projection 104B on an electrode pad 103 provided on a semiconductor chip 101, a step of exposing a part of the projection 104B to an upper surface of an insulating layer 105 formed on the semiconductor chip 101, a step of forming a conductive layer 107A on the upper surface of the insulating layer 105 and an exposed part of a tip portion 104D, a step of removing a protruded portion of the conductive layer 107A which is opposed to the tip portion 104D by means of a grinding roll 112, thereby exposing the projection from the conductive layer 107A, and a step of forming a conductive layer 108A through electrolytic plating using the conductive layer 107A as a feeding layer and patterning the conductive layer 108A.