Invention Grant
US07829381B2 Method of manufacturing a semiconductor device 有权
制造半导体器件的方法

Method of manufacturing a semiconductor device
Abstract:
A method of manufacturing a semiconductor device comprising the steps of (1) applying an underfill composition to a surface of a silicon wafer, (2) dicing the silicon wafer into chips, (3) positioning the chip, and (4) bonding the chip to the substrate, characterized in that the underfill composition consists of a first underfill composition and a second underfill composition, the step (1) comprises the steps of (i) applying the first underfill composition on the surface of the silicon wafer and then bringing the applied first underfill composition into a B-stage to form a layer of the first underfill composition having a thickness ranging from 0.5 to 1.0 time the height of the solder bump, and (ii) applying the second underfill composition on the B-stage first underfill composition layer and bringing the applied second underfill composition into a B-stage to form a layer wherein a total thickness of the B-stage first underfill composition and the B-stage second underfill composition ranges from 1.0 to 1.3 times the height of the solder bump, and that the first underfill composition comprises an epoxy resin and a filler, the filler being in an amount of from 30 to 85 wt % of a solid content of the first underfill composition, and the second underfill composition comprises an epoxy resin, a flux and/or a curing agent functioning also as a flux.
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