Invention Grant
- Patent Title: Taped semiconductor device and method of manufacture
- Patent Title (中): 带状半导体器件及其制造方法
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Application No.: US11492764Application Date: 2006-07-26
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Publication No.: US07829385B2Publication Date: 2010-11-09
- Inventor: Warren M. Farnworth
- Applicant: Warren M. Farnworth
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/04
Abstract:
Printed tape is used to form a leads on chip (LOC) ball grid array (BGA) semiconductor device. Leads for a plurality of devices may be applied simultaneously. Bond wires, glob top encapsulant, and the ball grid arrays for the devices may be formed in single process steps. A low temperature curing adhesive material may be used to reduce the effects of differential thermal expansion between the tape and surface of the wafer. In another embodiment of the invention, anisotropically conductive adhesive material is used to connect bond pads on a wafer to leads printed on a tape.
Public/Granted literature
- US20060267196A1 Taped semiconductor device and method of manufacture Public/Granted day:2006-11-30
Information query
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