Invention Grant
- Patent Title: MOSFET devices and methods of making
- Patent Title (中): MOSFET器件及其制造方法
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Application No.: US12368498Application Date: 2009-02-10
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Publication No.: US07829402B2Publication Date: 2010-11-09
- Inventor: Kevin Sean Matocha , Stephen Daley Arthur , Ramakrishna Rao , Peter Almern Losee , Zachary Matthew Stum
- Applicant: Kevin Sean Matocha , Stephen Daley Arthur , Ramakrishna Rao , Peter Almern Losee , Zachary Matthew Stum
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Scott J. Asmus
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234
Abstract:
A MOSFET device and a method for fabricating MOSFET devices are disclosed. The method includes providing a semiconductor device structure including a semiconductor device layer of a first conductivity type, and ion implanting a well structure of a second conductivity type in the semiconductor device layer, where the ion implanting includes providing a dopant concentration profile in a single mask implant sequence.
Public/Granted literature
- US20100200931A1 MOSFET DEVICES AND METHODS OF MAKING Public/Granted day:2010-08-12
Information query
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