Method of manufacturing semiconductor device

Invention Grant

US07829406B2 Method of manufacturing semiconductor device 有权

Title translation: 制造半导体器件的方法

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Patent Title: Method of manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US12208372

Application Date: 2008-09-11
Publication No.: US07829406B2

Publication Date: 2010-11-09
Inventor: Shunsuke Doi , Yukiteru Matsui
Applicant: Shunsuke Doi , Yukiteru Matsui
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Priority: JP2007-238364 20070913
Main IPC: H01L21/8238
IPC: H01L21/8238

Method of manufacturing semiconductor device

Abstract:

Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.

Abstract(Chinese):

公开了一种制造半导体器件的方法，其包括在半导体衬底上形成绝缘膜，该半导体衬底具有形成在除了凹部之外的半导体衬底之上的凹部和阻挡膜，从而用绝缘膜填充凹部，通过抛光执行第一抛光该绝缘膜通过使用含有氧化铈和第一阴离子表面活性剂的第一研磨液的化学机械研磨法进行化学机械研磨，得到平坦化面，通过使用含有氧化铈的第二研磨液，对平坦化的绝缘膜进行研磨，进行第二次研磨，在与第一研磨不同的抛光条件下，分子量小于第一阴离子表面活性剂的第二阴离子表面活性剂，从而暴露出止动膜。

Public/Granted literature

US20090075487A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-03-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS