Invention Grant
US07829411B2 Method and device to form high quality oxide layers of different thickness in one processing step
有权
在一个加工步骤中形成不同厚度的高品质氧化物层的方法和装置
- Patent Title: Method and device to form high quality oxide layers of different thickness in one processing step
- Patent Title (中): 在一个加工步骤中形成不同厚度的高品质氧化物层的方法和装置
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Application No.: US10503046Application Date: 2003-01-20
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Publication No.: US07829411B2Publication Date: 2010-11-09
- Inventor: Josine Johanna Gerarda Petra Loo , Youri Ponomarev , Robertus Theodorus Fransiscus Schaijk
- Applicant: Josine Johanna Gerarda Petra Loo , Youri Ponomarev , Robertus Theodorus Fransiscus Schaijk
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP02075425 20020201
- International Application: PCT/IB03/00136 WO 20030120
- International Announcement: WO03/065437 WO 20030807
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises the steps of: doping the first and the second semiconductor region with a different dopant concentration, and oxidising, during the same processing step, both the first and the second semiconductor region under a temperature between 500° C. and 700° C., preferably between 500° C. and 650° C. A corresponding device is also provided.Using a low-temperature oxidation in combination with high doping levels results in an unexpected oxidation rate increase.
Public/Granted literature
- US20050079732A1 Method and device to form high quality oxide layers of different thickness in one processing step Public/Granted day:2005-04-14
Information query
IPC分类:
