Invention Grant
US07829414B2 Method for manufacturing non-volatile semiconductor memory device, and non-volatile semiconductor memory device
有权
用于制造非易失性半导体存储器件和非易失性半导体存储器件的方法
- Patent Title: Method for manufacturing non-volatile semiconductor memory device, and non-volatile semiconductor memory device
- Patent Title (中): 用于制造非易失性半导体存储器件和非易失性半导体存储器件的方法
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Application No.: US12537652Application Date: 2009-08-07
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Publication No.: US07829414B2Publication Date: 2010-11-09
- Inventor: Shu Shimizu
- Applicant: Shu Shimizu
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-200913 20040707
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
An isolation oxide film whose upper surface is higher than a surface of a substrate is formed in the substrate. A silicon oxide film is formed on the substrate between the isolation oxide films. A self-aligned polysilicon film is formed on the silicon oxide film between the isolation oxide films. After forming a resist pattern covering the peripheral circuitry, the isolation oxide films in the memory cell are etched by a predetermined thickness. An ONO film is formed on the entire surface of the substrate, a second resist pattern covering the memory cell is formed. Then, the ONO film, the polysilicon film 8 and the silicon oxide film 7 are removed from the peripheral circuitry.
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