Invention Grant
- Patent Title: Method of fabricating a high Q factor integrated circuit inductor
- Patent Title (中): 制造高Q因子集成电路电感的方法
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Application No.: US12612743Application Date: 2009-11-05
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Publication No.: US07829427B2Publication Date: 2010-11-09
- Inventor: Daniel C. Edelstein , Panayotis C. Andricacos , John M. Cotte , Hariklia Deligianni , John H. Magerlein , Kevin S. Petrarca , Kenneth J. Stein , Richard P. Volant
- Applicant: Daniel C. Edelstein , Panayotis C. Andricacos , John M. Cotte , Hariklia Deligianni , John H. Magerlein , Kevin S. Petrarca , Kenneth J. Stein , Richard P. Volant
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts; Ian D. MacKinnon
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A method of forming an inductor. The method including: (a) forming a dielectric layer on a top surface of a substrate; after (a), (b) forming a lower trench in the dielectric layer; after (b), (c) forming a resist layer on a top surface of the dielectric layer; after (c), (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and after (d), (e) completely filling the lower trench and at least partially filling the upper trench with a conductor in order to form the inductor.
Public/Granted literature
- US20100047990A1 METHOD OF FABRICATING A HIGH Q FACTOR INTEGRATED CIRCUIT INDUCTOR Public/Granted day:2010-02-25
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