Invention Grant
- Patent Title: Nitride nanowires and method of producing such
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Application No.: US12308249Application Date: 2008-01-14
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Publication No.: US07829443B2Publication Date: 2010-11-09
- Inventor: Werner Seifert , Damir Asoli , Zhaoxia Bi
- Applicant: Werner Seifert , Damir Asoli , Zhaoxia Bi
- Applicant Address: SE Lund
- Assignee: QuNano AB
- Current Assignee: QuNano AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group, PLLC
- Priority: SE0700102 20070112
- International Application: PCT/SE2008/050036 WO 20080114
- International Announcement: WO2008/085129 WO 20080717
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.
Public/Granted literature
- US20100163840A1 Nitride nanowires and method of producing such Public/Granted day:2010-07-01
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