Invention Grant
- Patent Title: Field effect transistor manufacturing method
- Patent Title (中): 场效应晶体管制造方法
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Application No.: US11269641Application Date: 2005-11-09
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Publication No.: US07829444B2Publication Date: 2010-11-09
- Inventor: Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
- Applicant: Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Canon Kabushiki Kaisha,Tokyo Institute of Technology
- Current Assignee: Canon Kabushiki Kaisha,Tokyo Institute of Technology
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-326686 20041110
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
Public/Granted literature
- US20060110867A1 Field effect transistor manufacturing method Public/Granted day:2006-05-25
Information query
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