Invention Grant
- Patent Title: Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
- Patent Title (中): 将选择性钌沉积与半导体器件制造相结合的方法
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Application No.: US11853393Application Date: 2007-09-11
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Publication No.: US07829454B2Publication Date: 2010-11-09
- Inventor: Kenji Suzuki
- Applicant: Kenji Suzuki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/285
- IPC: H01L21/285
Abstract:
A method for integrating selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu. The method includes selectively depositing a Ru metal film on a metallization layer or on bulk Cu using a process gas containing Ru3(CO)12 precursor vapor and a CO gas in a thermal chemical vapor deposition process. A semiconductor device containing one or more selectively deposited Ru metal films is described.
Public/Granted literature
- US20090065939A1 METHOD FOR INTEGRATING SELECTIVE RUTHENIUM DEPOSITION INTO MANUFACTURING OF A SEMICONDUCTIOR DEVICE Public/Granted day:2009-03-12
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