Invention Grant
- Patent Title: Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
- Patent Title (中): 通过使用氮化铝在微结构器件中制造铜基金属化结构增加可靠性的方法
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Application No.: US11948245Application Date: 2007-11-30
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Publication No.: US07829460B2Publication Date: 2010-11-09
- Inventor: Christof Streck , Volker Kahlert
- Applicant: Christof Streck , Volker Kahlert
- Applicant Address: US TX Austin
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson
- Priority: DE102007004867 20070131
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.
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