Invention Grant
- Patent Title: Through-wafer vias
- Patent Title (中): 通晶圆通孔
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Application No.: US11800098Application Date: 2007-05-03
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Publication No.: US07829462B2Publication Date: 2010-11-09
- Inventor: Jeffrey F. DeNatale , Stefan C. Lauxtermann
- Applicant: Jeffrey F. DeNatale , Stefan C. Lauxtermann
- Applicant Address: US CA Thousand Oaks
- Assignee: Teledyne Licensing, LLC
- Current Assignee: Teledyne Licensing, LLC
- Current Assignee Address: US CA Thousand Oaks
- Agency: Koppel, Patrick, Heybl & Dawson
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/66

Abstract:
A through-wafer via interconnect region is in a circuit portion of a wafer, the circuit portion including at least one electrically conducting metal layer and configured for use, after dicing of the wafer, as one of a plurality of layers stacked vertically to form a three dimensional integrated circuit. Within the metal layer in the circuit portion, the metal is removeably distributed such that the ratio of metal to nonmetal area, within the via region, varies by less than a predetermined amount from the ratio of metal to nonmetal area outside the via region.
Public/Granted literature
- US20080272499A1 Through-wafer vias Public/Granted day:2008-11-06
Information query
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