Method for manufacturing memory element

Invention Grant

US07829473B2 Method for manufacturing memory element 有权

Title translation: 存储元件制造方法

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Patent Title: Method for manufacturing memory element
Patent Title (中): 存储元件制造方法
Application No.: US12050687

Application Date: 2008-03-18
Publication No.: US07829473B2

Publication Date: 2010-11-09
Inventor: Kensuke Yoshizumi
Applicant: Kensuke Yoshizumi
Applicant Address: JP
Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee Address: JP
Agency: Husch Blackwell LLP Welsh Katz
Priority: JP2007-078348 20070326
Main IPC: H01L21/469
IPC: H01L21/469

Abstract:

A first conductive layer is formed, a composition layer over the first conductive layer is formed by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent, and the composition layer is dried. Subsequently, pretreatment is performed in which the organic material covering the nanoparticles, which are positioned on a surface of the composition layer, is decomposed, and then baking is performed. In this manner, a second conductive layer is formed by sintering nanoparticles which are positioned on a surface of the composition layer. A memory layer is formed between the first conductive layer and the second conductive layer using the nanoparticles covered with the organic materials to which the pretreatment is not performed.

Abstract(Chinese):

形成第一导电层，通过将其中包含被有机材料覆盖的导电材料的纳米颗粒分散在溶剂中的组合物排出，形成第一导电层上的组合物层，并将组合物层干燥。随后，进行预处理，其中覆盖在组合物层表面上的纳米颗粒的有机材料被分解，然后进行烘烤。以这种方式，通过烧结位于组合物层的表面上的纳米颗粒来形成第二导电层。使用覆盖有未进行预处理的有机材料的纳米颗粒，在第一导电层和第二导电层之间形成存储层。

Public/Granted literature

US20080242083A1 Method for Manufacturing Memory Element Public/Granted day:2008-10-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理