Invention Grant
US07829834B2 Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof 有权
具有用于抑制暗电流的光电二极管和扩散节点之间的多个栅极的低电压图像传感器及其驱动传输晶体管的方法

Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof
Abstract:
Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
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