Invention Grant
- Patent Title: Semiconductor light emitting device having roughness and method of fabricating the same
- Patent Title (中): 具有粗糙度的半导体发光器件及其制造方法
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Application No.: US11896877Application Date: 2007-09-06
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Publication No.: US07829881B2Publication Date: 2010-11-09
- Inventor: Ho Sang Yoon
- Applicant: Ho Sang Yoon
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2006-0086473 20060907
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L29/22 ; H01L33/00 ; H01L29/24 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor light emitting device including a first electrode contact layer, an active layer formed on the first electrode contact layer, a second electrode contact layer formed on the active layer, and a first roughness layer formed on at least one of the first and second electrode contact layers.
Public/Granted literature
- US20080061308A1 Semiconductor light emitting device and method of fabricating the same Public/Granted day:2008-03-13
Information query
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