Invention Grant
- Patent Title: Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device
- Patent Title (中): 使用有机双极半导体的非挥发性铁电薄膜器件及其处理方法
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Application No.: US10584039Application Date: 2004-12-01
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Publication No.: US07829884B2Publication Date: 2010-11-09
- Inventor: Gerwin Hermanus Gelinck , Albert W. Marsman , Fredericus Johannes Touwslager , Dagobert Michel De Leeuw
- Applicant: Gerwin Hermanus Gelinck , Albert W. Marsman , Fredericus Johannes Touwslager , Dagobert Michel De Leeuw
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips Electronics N.V.
- Current Assignee: Koninklijke Philips Electronics N.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP03104889 20031222
- International Application: PCT/IB2004/052613 WO 20041201
- International Announcement: WO2005/064614 WO 20050714
- Main IPC: H01L35/24
- IPC: H01L35/24
Abstract:
A non-volatile ferroelectric memory device is proposed which comprises a combination of an organic ferroelectric polymer with an organic ambipolar semiconductor. The devices of the present invention are compatible with—and fully exploit the benefits of polymers, i.e. solution processing, low-cost, low temperature layer deposition and compatibility with flexible substrates.
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