Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
-
Application No.: US11516632Application Date: 2006-09-07
-
Publication No.: US07829905B2Publication Date: 2010-11-09
- Inventor: Yan Huang , Kuo-An Chiu , Hua-Jun Peng , Jian Feng , Hung-Shen Chu
- Applicant: Yan Huang , Kuo-An Chiu , Hua-Jun Peng , Jian Feng , Hung-Shen Chu
- Applicant Address: CN Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
- Current Assignee Address: CN Hong Kong
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: H01L33/46
- IPC: H01L33/46
Abstract:
A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.
Public/Granted literature
- US20080061304A1 Semiconductor light emitting device Public/Granted day:2008-03-13
Information query
IPC分类:
