Invention Grant
- Patent Title: Three dimensional features on light emitting diodes for improved light extraction
- Patent Title (中): 用于改进光提取的发光二极管上的三维特征
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Application No.: US12030404Application Date: 2008-02-13
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Publication No.: US07829906B2Publication Date: 2010-11-09
- Inventor: Matthew Donofrio
- Applicant: Matthew Donofrio
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
Public/Granted literature
- US20080135866A1 METHOD OF FORMING THREE DIMENSIONAL FEATURES ON LIGHT EMITTING DIODES FOR IMPROVED LIGHT EXTRACTION Public/Granted day:2008-06-12
Information query
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