Invention Grant
- Patent Title: Light emitting device and method of fabricating light emitting device
- Patent Title (中): 发光元件及其制造方法
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Application No.: US11883078Application Date: 2006-01-26
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Publication No.: US07829910B2Publication Date: 2010-11-09
- Inventor: Hitoshi Ikeda , Masayoshi Obara
- Applicant: Hitoshi Ikeda , Masayoshi Obara
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-023988 20050131
- International Application: PCT/JP2006/301250 WO 20060126
- International Announcement: WO2006/380408 WO 20060803
- Main IPC: H01L29/43
- IPC: H01L29/43

Abstract:
Each second electrode formed on a second main surface of a compound semiconductor layer of a light emitting device has an alloyed contact layer disposed contacting the second main surface, aimed at reducing contact resistance with the compound semiconductor layer, and a solder layer connecting the alloyed contact layer to the conductive support. The solder layer forms therein a Sn-base solder layer disposed on the alloyed contact layer side having a melting point lower than the alloyed contact layer, and a Au—Sn-base solder layer disposed contacting the Sn-base solder layer opposed to the alloyed contact layer side, containing total Au and Sn of 80% or more, and having a melting point higher than the Sn-base solder layer. This configuration can provide excellent reliability of bonding between the Au—Sn-base solder layer and the alloyed contact layer, and consequently less causative of delamination of the Au—Sn-base solder layer.
Public/Granted literature
- US20080164488A1 Light Emitting Device and Method of Fabricating Light Emitting Device Public/Granted day:2008-07-10
Information query
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