At an upper part of au AIGaInP based compound semiconductor layer including an active layer 14 sandwiched by a lower cladding layer 13 and an upper cladding layer 15, a circular electrode 19 for wire bonding and cross-shaped branch electrodes 18 for current spreading connected to the circular electrode 19 arc formed. A contact electrode 17 for current injection is connected to the branch electrodes 18 for current spreading. An interface contact electrode 12 for current injection is provided under the AIGaInP based compound semiconductor layer. A light reflection mirror layer 10 is provided under the interface contact electrode 12 for current injection. The interface contact electrode 12 for current injection is provided right under an outer periphery of the electrode 19 for wire bonding or under a region in vicinity of the outer periphery of the electrode 19 for wire bonding.