Invention Grant
- Patent Title: Efficient carrier injection in a semiconductor device
- Patent Title (中): 在半导体器件中有效的载流子注入
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Application No.: US11735993Application Date: 2007-04-16
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Publication No.: US07829912B2Publication Date: 2010-11-09
- Inventor: Ralph H. Johnson
- Applicant: Ralph H. Johnson
- Applicant Address: US CA Sunnyvale
- Assignee: Finisar Corporation
- Current Assignee: Finisar Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Workman Nydegger
- Main IPC: H01L31/167
- IPC: H01L31/167

Abstract:
Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.
Public/Granted literature
- US20080023688A1 EFFICIENT CARRIER INJECTION IN A SEMICONDUCTOR DEVICE Public/Granted day:2008-01-31
Information query
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